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TISP61089HDM Overvoltage Protector
Electrical Characteristics, TA = 25 ° C (Unless Otherwise Noted) (Continued)
Parameter
Test Conditions
Min Typ Max Unit
I H
Holding current
I T = -1 A, di/dt = 1 A/ms, V GG = -100 V
-150
mA
I GKS
I GT
V GT
C KA
Gate reverse current
Gate trigger current
Gate-cathode trigger voltage
Cathode-anode off-state capacitance
V GG = V GK = V GKRM , V KA = 0
I T = -3 A, t p(g) ≥ 20 μ s, V GG = -100 V
I T = -3 A, t p(g) ≥ 20 μ s, V GG = -100 V
f = 1 MHz, V d = 1 V rms, V D = -50 V, I G = 0
T A = 25 ° C
T A = 85 ° C
-5
-50
15
2.5
40
μ A
mA
V
pF
NOTE:
5. Voltage measurements should be made with an oscilloscope with limited bandwidth (20 MHz) to avoid high frequency noise.
Thermal Characteristics, TA = 25 ° C (Unless Otherwise Noted)
Parameter
Test Conditions
Min Typ Max
Unit
R θ JA
Junction to ambient thermal resistance
EIA/JESD51-7 PCB, EIA/JESD51-2 Environment, P TOT = 4 W
(See Note 6)
55
° C/W
NOTE
6. EIA/JESD51-7 high effective thermal conductivity test board (multi-layer) connected with 0.6 mm printed wiring track widths.
Parameter Measurement Information
V GK(BO)
I PPSM
I FSM (= |I TSM |)
I F
+i
V F
Quadrant I
Forward
Conduction
Characteristic
-v
V GG
V D
I D
+v
I (BO)
V (BO)
I S
V S
V T
I H
I T
I TSM
Quadrant III
Switching
Characteristic
-i
I PPSM
PM-TISP6-001-a
Figure 1. Voltage-Current Characteristic
Unless Otherwise Noted, All Voltages are Referenced to the Anode
MAY 2004 – REVISED AUGUST 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
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